物料参数
| Architecture: | DDR-II CIO |
| Bank Switching: | N |
| Burst Length(Words): | 2 |
| Data Width: | x 36 |
| ECC: | N |
| Lead Ball Finish: | Sn/Ag/Cu |
| On-Die Termination: | N |
| Organization (X x Y): | 1Mb x 36 |
| Peak Reflow Temp: | 260.0°C |
| Qualification: | Industrial |
| Read Latency (Cycles): | 1.5 |
| Family: | DDR-II CIO |
| Operating Temperature max: | 85.0°C |
| Frequency: | 250.0MHz |
| Operating Voltage max: | 1.9V |
| Interfaces: | Parallel |
| Density: | 36.0MBit |
| Density: | 36.0MBit |
无库存